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VLSI_Class_Notes_10_2010 - EEL 5322 W.R.Eisenstadt-1 VLSI...

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EEL 5322 W.R.Eisenstadt - 1 - VLSI Class Notes 10, Fall 2010 , Homework Problem # 9, Due Wednesday, Sept 22, 2010. 1) Re-do the problem in class under the conditions of SML = 0.05 um << feature size and MFP = 200 um >> feature size. In this problem there is a set of 0.80 um thick metal lines on oxide separated by 2.0 um spaces. i) Determine the thickness of the LTO layer to be deposited so that there will be at least 1.0 um of Oxide in all places after the CMP step. ii) Draw the cross section in scale after the LTO is deposited. Reading Today: Jaeger Section 3.8.2, 7.7 and 7.8 Lecture discussion : Chemical Mechanical Polish (CMP) A processed surface of the silicon wafer after transistor formation and depositing an inter-level dielectric has a lot of surface topography. If you look at the cross-section before metallization, the surface is flat. How to get a flat surface? Chemical Mechanical Polish (CMP). The basic process sands in the uneven topography away to achieve a planar surface over the entire chip and wafer. A CMP system consists of a rotating table which holds a polishing cloth pad that is also rotating. In addition, there is wafer holder which is rotating. The polishing process adds a wet slurry which consists of an abrasive compound and a component that chemically interacts with the wafer surface being polished. The abrasive compound has similar hardness as the material being polished to prevent gross mechanical damage to the wafer surface. Polishing results from a combination of
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