VLSI_Class_Notes_11_2010

VLSI_Class_Notes_11_2010 - EEE 5322 W.R. Eisenstadt -1-...

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EEE 5322 W.R. Eisenstadt - 1 - VLSI Class Notes Fall 2010, Class 11 Reading Today: Jaeger Chapter 2.2 Homework Due: Friday Sept. 24, 2010 1) Page 41, Jaeger 2.4. 2) Redo the Etching Example Problem in class with 1200 nm of Resist, 500nm ± 12% Polysilicon and 2100 nm ± 12 % Gate Oxide, all other conditions are the same. Lecture discussion : Etching Etching is a method of removing layers from silicon wafers, for example silicon, polysilicon, oxide, silicon-nitrite, metal. .. Typically, a mask layer is put on top of the material to be etched. The mask layer can remain for after etching, or it can be a sacrificial layer which will be removed after the etching it is completed. For example, photoresist is sacrificial and is removed after etching. The mask can undergo erosion and etching in addition to the target etching area and this depends on the etching process so the mask layer must be made thick enough. Parameters for characterizing etch processes: 1) Etch rate:
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This note was uploaded on 10/02/2011 for the course ECE 5322 taught by Professor Ei during the Spring '10 term at University of Florida.

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VLSI_Class_Notes_11_2010 - EEE 5322 W.R. Eisenstadt -1-...

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