VLSI_Class_Notes_11_2010 - EEE 5322 W.R. Eisenstadt -1-...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
EEE 5322 W.R. Eisenstadt - 1 - VLSI Class Notes Fall 2010, Class 11 Reading Today: Jaeger Chapter 2.2 Homework Due: Friday Sept. 24, 2010 1) Page 41, Jaeger 2.4. 2) Redo the Etching Example Problem in class with 1200 nm of Resist, 500nm ± 12% Polysilicon and 2100 nm ± 12 % Gate Oxide, all other conditions are the same. Lecture discussion : Etching Etching is a method of removing layers from silicon wafers, for example silicon, polysilicon, oxide, silicon-nitrite, metal. .. Typically, a mask layer is put on top of the material to be etched. The mask layer can remain for after etching, or it can be a sacrificial layer which will be removed after the etching it is completed. For example, photoresist is sacrificial and is removed after etching. The mask can undergo erosion and etching in addition to the target etching area and this depends on the etching process so the mask layer must be made thick enough. Parameters for characterizing etch processes: 1) Etch rate:
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 10/02/2011 for the course ECE 5322 taught by Professor Ei during the Spring '10 term at University of Florida.

Page1 / 3

VLSI_Class_Notes_11_2010 - EEE 5322 W.R. Eisenstadt -1-...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online