MEMS_15 gw chat 3_01

MEMS_15 gw chat 3_01 - Chapter 3 Pattern transfer with...

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Chapter 3 Pattern transfer with additive techniques
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Additive techniques Introduction Additive technique (deposition): solid can be deposited onto a substrate from liquid, gas, plasma or a solid state Followed with thermal processing MEMS includes a much wider range from inorganic to organic materials than IC Methods: Physical Chemical Plasma spray Electrochemistry Others
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Additive techniques Methods Table 3.1
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Silicon growth Many cases pure silicon crystal is required Manufacture: Czochraiski method Use a silicon crystal seed Insert it into a molten and ultrapure silicon melt at high temperature ~ 1414 degree Pull it up slowly at speed of 2-5 cm/hr The molten Si slowly rotates in a Si crucible No stirring in the melt to avoid O 2 transfer from the SiO 2 -Si(crucible/liqud) interphase to the Si(liquid)-Si(solid) interphase A float-zone crystal growth method can avoid the contact with the crucible
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Silicon growth Pure silicon
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Silicon growth Pure silicon
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Silicon growth Pure silicon Evaluation of the grown crystalline material Measuring the resistivity with a 4 point probe Measuring crystal perfection with x-ray and e-beam diffraction
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Silicon growth Pure silicon
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Doping of Si Donors (n-type) Acceptors (p-type) Dopant elements
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MEMS_15 gw chat 3_01 - Chapter 3 Pattern transfer with...

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