MEMS_09 guirenemerging tech_01

MEMS_09 guirenemerging tech_01 - Chapter 1 Emerging...

Info iconThis preview shows pages 1–7. Sign up to view the full content.

View Full Document Right Arrow Icon
Chapter 1 Emerging lithographies technologies
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Emerging lithographies technologies Emerging lithographies technologies Proximal probes lithograpgy Very thin to monolayer lithography Soft lithography 3-D lithography Holography lithography Stereolithography Lithography on nonplanar substrate using high resolution linear and rotating stage Enable a few nm in size Terahertz switching speed
Background image of page 2
Scanning probe lithography STM/AFM background Scanning tunneling microscope (STM) Imaging surface of conductive material with atomic scale detail Invented in 1986 There are many other new proximal probes Common feature: resolution is not determined by the visible light Measuring 0.1 nm range
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Scanning probe lithography Principle: Bring a conductive probe tip up to a conducting surface When the probe is close to the surface (<1 nm) and a +/-10V voltage is supplied, a very small current is generated Since electron in the probe and surface have wave function extending beyond the physical surface boundary If the extends where the spillover overlaps, a measurable current is produced The current depends exponentially on the spacing, e.g. 10/0.1 nm)
Background image of page 4
Scanning probe lithography Principle: Piezo transducer is used to control the distance The probe scans and sees the atomic contour over the surface Image is formed by the STM from the electronic structure as well as from the geometry of the sample
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Advantages over e-beam Low energy of electron (< 50 eV) -> Reduce proximity effect, back scattering -> Improve resolution Exposure dose can be confined to a beam diameter < 10 nm Wider exposure latitude (Fig. 1.45): less sensitive to dose
Background image of page 6
Image of page 7
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 10/03/2011 for the course BMEN 589 taught by Professor Wang during the Spring '11 term at South Carolina.

Page1 / 22

MEMS_09 guirenemerging tech_01 - Chapter 1 Emerging...

This preview shows document pages 1 - 7. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online