MEMS_03 guiren photolithography_resolution_02

MEMS_03 guiren photolithography_resolution_02 - Chapter 1...

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Chapter 1 Critical resolution
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Critical dimension Critical dimension (CD): absolute size of minimum feature Overall resolution of a process: consistent ability to print a CD under conditions of reasonable manufacturing variation Affecting factors: Hardware: diffraction limit of light, scattering of charged particle, lens aberration, mechanical stability of the system, etc Materials: contrast, swelling behavior, thermal flow, chemical etch resistance, etc Process: resist variables, e.g. swelling during development, stability during etching and baking
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Critical dimension Line width: horizontal distance between the two resist- air boundary in a given line of a cross section at a given height Line width control: control of the critical size and structure
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Critical dimension Resolution measurement: Transmitted light Reflected light Others (inset 3.19)
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Metrology techniques
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Lithographic sensitivity Lithographic sensitivity: Defining the measurement of the efficiency that translate resist exposure into a sharp image Scattered largely due to complex process Experimentally needs to be duplicated exactly in order to reproduce it
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Intrinsic resist sensitivity Intrinsic resist sensitivity (photochemical quantum efficiency) Φ: the resist’s response to radiation
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This note was uploaded on 10/03/2011 for the course BMEN 589 taught by Professor Wang during the Spring '11 term at South Carolina.

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MEMS_03 guiren photolithography_resolution_02 - Chapter 1...

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