20111ee2_1_2011_EE2_HW5

# 20111ee2_1_2011_EE2_HW5 - Physics for Electrical Engineers...

This preview shows pages 1–2. Sign up to view the full content.

Physics for Electrical Engineers P r o f . B . J a l a l i E E 2 H o m e w o r k # 5 D u e : M a r . 8 th , 2011, 4:00pm Use the values below for the following parameters if needed. n i (for Si at room temperature T=300 K) = 1X10 10 cm -3 N C (for Si at room temperature T=300 K) = 2.8X10 19 cm -3 N V (for Si at room temperature T=300 K) = 1.04X10 19 cm -3 For all the following problems, we assume at 300K. 1. By solving the continuity equation, obtain the current-voltage relation (ideal diode equation) for the diode shown below. Note that one side is a long-base and the other is a short-base. Hint: follow the procedure in the class note and course reader. Provide your answer in terms of L p , L n , W p , W n , D p , D n , N A , N D , q, ε s and voltage V applied across the diode. N A N D p-side W n << L p W p >> L n n-side X d 2. We have an infinitely long n-type piece of Si with a doping concentration of N D , in which the minority carrier lifetime is τ p and the minority carrier diffusion coefficient

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
This is the end of the preview. Sign up to access the rest of the document.

{[ snackBarMessage ]}

### Page1 / 2

20111ee2_1_2011_EE2_HW5 - Physics for Electrical Engineers...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online