20111ee2_1_2011_EE2_HW5

20111ee2_1_2011_EE2_HW5 - Physics for Electrical Engineers...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
Physics for Electrical Engineers P r o f . B . J a l a l i E E 2 H o m e w o r k # 5 D u e : M a r . 8 th , 2011, 4:00pm Use the values below for the following parameters if needed. n i (for Si at room temperature T=300 K) = 1X10 10 cm -3 N C (for Si at room temperature T=300 K) = 2.8X10 19 cm -3 N V (for Si at room temperature T=300 K) = 1.04X10 19 cm -3 For all the following problems, we assume at 300K. 1. By solving the continuity equation, obtain the current-voltage relation (ideal diode equation) for the diode shown below. Note that one side is a long-base and the other is a short-base. Hint: follow the procedure in the class note and course reader. Provide your answer in terms of L p , L n , W p , W n , D p , D n , N A , N D , q, ε s and voltage V applied across the diode. N A N D p-side W n << L p W p >> L n n-side X d 2. We have an infinitely long n-type piece of Si with a doping concentration of N D , in which the minority carrier lifetime is τ p and the minority carrier diffusion coefficient
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

Page1 / 2

20111ee2_1_2011_EE2_HW5 - Physics for Electrical Engineers...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online