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20111ee2_1_2011_EE2_Practice Set 1

20111ee2_1_2011_EE2_Practice Set 1 - Sketch the...

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Physics for Electrical Engineers Prof. B. Jalali EE 2 Winter 2011 Practice Problem Set #1 1) Consider a 1-dimensional pn- junction, with a p-side doping of 10 16 cm -3 and n-side doping of 10 18 cm -3 . a) Calculate V bi , the built-in voltage. b) Calculate W, the depletion width (we call it x d in lecture). c) Calculate x p and x n , which are the depletion widths in the p-side and n-side, respectively. d) Sketch the charge-block diagram (i.e. charge density vs. position) across the depletion region. e) Sketch the electric field vs. position across the depletion region. f) Sketch the electrostatic potential vs. position across the depletion region. g)
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Unformatted text preview: Sketch the band-diagram; be sure to include the Fermi levels. 2) In a certain piece of semiconductor, the electron concentration can be found according to the following formula: ݊ሺݔሻ ൌ 10 ଵ଴ ൈ ቀ1 – ݔ ܮ ቁ cm ‐3 2µm 1000 V where ܮ ൌ is the width of the piece. There is also a uniform electric field equal to cm pointing in the positive x-direction. The electron mobility is 1000 V.s cm 2 . Find the direction and magnitude of the electron drift current density, electron diffusion current density, and total current density at ݔ ൌ ௅ ଶ . (The system may or may not be in equilibrium)....
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