HW5 - V GS = 4 V, V TN = 1 V, = 0.04 V-1 (10 points) 4.33 V...

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ECE 322: Microelectronic Circuits Homework #5 Problem numbers are from your textbook, but use the values given below in place of the values given in the textbook problems. Default values for all problems in Chapter 4 (note that the values for K ' are different than the default values on page 197 of the book): NMOS PMOS V TO +0.75 V -0.75 V γ 0.75 V 0.5 V 2 φ F 0.6 V 0.6 V K' 25 μA/V 2 10 μA/V 2 Note: If working from the second edition, the problem equivalences are as follows: 3rd Edition 2nd Edition 3rd Edition 2nd Edition 4.21 4.24 4.43 4.44 4.27 4.31 4.52 4.54 4.29 4.33 4.54 4.56 4.33 4.37 4.67 4.70 4.85 4.84 4.2 The NMOS Transistor 4.21 W = 5 μm, K' n = 250 μA/V 2 (10 points) 4.27 W = 5 μm (10 points) 4.29
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Unformatted text preview: V GS = 4 V, V TN = 1 V, = 0.04 V-1 (10 points) 4.33 V DD = 8 V, (c) = 0.02 V-1 (15 points) Ignore any possible body effect (assume V TN = V T0 ). 4.43 V SB = 2 V, W / L = 5/1 (10 points) 4.3 PMOS Transistors 4.52 W / L = 50 / 1 (10 points) 4.54 NMOS: W / L = 20 / 1, PMOS: W / L = 50 / 1 (10 points) Hint: 0 V O 5V since no applied voltages outside this range. NMOS: V IN can be considered source terminal when V IN = 0. PMOS: V IN can be considered source terminal when V IN = 5V. 4.6 Capacitances in MOS Transistors 4.67 W = 10 m, do (a), (b), and (c) only (10 points) 4.8 Biasing the NMOS Field-Effect Transistor 4.85 V DD = 10 V, do (a) only (15 points)...
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This note was uploaded on 10/11/2011 for the course ECE 322 taught by Professor Staff during the Spring '08 term at Boise State.

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