Lab9 - ECE 322L Microelectronics Lab Lab#9 Biasing a BJT...

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ECE 322L: Microelectronics Lab Lab #9: Biasing a BJT Common-Emitter Amplifier Objectives: Examine the properties of a four-resistor BJT self-biasing network. Materials: Voltmeter 12V Voltage supply Solderless breadboard Hookup wire One 22k resistor (use 5% tolerance, not higher precision) One 39k resistor (use 5% tolerance, not higher precision) One 3.3k resistor (use 5% tolerance, not higher precision) One 4.7k resistor (use 5% tolerance, not higher precision) One 2N2222A NPN transistor Setup: Construct the circuit shown below using R B1 = 39k , R B2 = 22k , R C = 4.7k , and R E = 3.3k , and a 2N2222A as the NPN transistor. V C V B R B2 R C R E 12 V 12 V C B E R B1
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Background: 2N2222A NPN transistor : Hold the 2N222A transistor with the wire leads pointing toward you and the metal tab on the case pointing up. Clockwise from the tab you will find the transistor emitter (E), base (B), and collector (C), respectively. The DC current gain β of this transistor is usually around 75, but this can vary greatly from one transistor to another and with operating
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Lab9 - ECE 322L Microelectronics Lab Lab#9 Biasing a BJT...

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