BJT1_Device - The disclaimer The lecture notes may contain...

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1 Introduction of Microelectronics The disclaimer The lecture notes may contain materials from other sources (books and papers). They may not be properly referenced, because they are prepared in a hurry, and strictly for teaching purpose. The lecture notes should NOT be distributed outside of the class. The lecture notes may have errors. 1
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Hao Jiang jianghao@sfsu.edu Assistant Professor of Electrical Engineering School of Engineering San Francisco State University Bipolar Junction Transistors
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3 Introduction of Microelectronics Outline Voltage control current source BJT operating principles Large signal model of a BJT Small signal model of a BJT 3
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4 Introduction of Microelectronics A voltage controlled current source Regardless of the input resistance, the magnitude of amplification remains unchanged. 4
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5 Introduction of Microelectronics A cross-section of a real SiGe BJT Different collector doping concentrations result in different type of SiGe HBTs within a given process technology with different speed (f T ), C m and breakdown voltage (BVceo and BVcbo)
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6 Introduction of Microelectronics Structure and Symbol of Bipolar Transistor Bipolar transistor can be thought of as a sandwich of three doped Si regions. The outer two regions are doped with the same polarity, while the middle region is doped with opposite polarity.
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7 Introduction of Microelectronics Device physics
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8 Introduction of Microelectronics Accurate Bipolar Representation Collector also carries current due to carrier injection from base.
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Introduction of Microelectronics 9 Carrier Transport in Base
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BJT1_Device - The disclaimer The lecture notes may contain...

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