BT151_SERIES_2 - Philips Semiconductors Product...

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Philips Semiconductors Product specification Thyristors BT151 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT151- 500R 650R 800R bidirectional blocking voltage V DRM , Repetitive peak off-state 500 650 800 V capability and high thermal cycling V RRM voltages performance. Typical applications I T(AV) Average on-state current 7.5 7.5 7.5 A include motor control, industrial and I T(RMS) RMS on-state current 12 12 12 A domestic lighting, heating and static I TSM Non-repetitive peak on-state 100 100 100 A switching. current PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode 3 gate tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500R -650R -800R V DRM , V RRM Repetitive peak off-state - 500 1 650 1 800 V voltages I T(AV) Average on-state current half sine wave; T mb 109 ˚C - 7.5 A I T(RMS) RMS on-state current all conduction angles - 12 A I TSM Non-repetitive peak half sine wave; T j = 25 ˚C prior to on-state current surge t = 10 ms - 100 A t = 8.3 ms - 110 A I 2 tI 2 t for fusing t = 10 ms - 50 A 2 s dI T /dt Repetitive rate of rise of I TM = 20 A; I G = 50 mA; - 50 A/ μ s on-state current after dI G /dt = 50 mA/ μ s triggering I GM Peak gate current - 2 A V GM Peak gate voltage - 5 V V RGM Peak reverse gate voltage - 5 V P GM Peak gate power - 5 W P G(AV) Average gate power over any 20 ms period - 0.5 W T stg Storage temperature -40 150 ˚C T j Operating junction - 125 ˚C temperature ak g 123 tab 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/ μ s.
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BT151_SERIES_2 - Philips Semiconductors Product...

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