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ECE3040_Homework4

ECE3040_Homework4 - Find the Q-points for the diodes in the...

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ECE 3040B: Homework #4 Due Date: October 10, 2011 Page 1 of 2 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3040C: Microelectronic Circuits Fall Semester 2011, Homework #4 Homework Due Date: Friday, October 10, 2011 1. Pierret, Problem 6.10 (20 points) 2. PN-Junction: Reverse Bias (15 points) The junction capacitance C j of a one-sided silicon pn junction (i.e. one side of the junction is highly doped, the other side is much lower doped, e.g. n + p or p + n) at T = 300 K is measured under a reverse bias V A = – 50 mV and found to be 1.3 pF. The junction area is 10 -5 cm 2 and V bi = 0.95 V. (a) Find the doping concentration of the low-doped side of the junction. (b) Find the doping concentration of the higher doped region. 3. Diode Circuit: Q-Point Analysis (20 points)

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Unformatted text preview: Find the Q-points for the diodes in the circuit using (a) the ideal diode model and (b) the constant voltage drop model with V on = 0.75 V. 4. Diode Circuit: Zener Diode (20 points) Find the Q-point for the Zener diode. ECE 3040B: Homework #4 Due Date: October 10, 2011 Page 2 of 2 5. Half-Wave Rectifier (25 points ) A 3.3V, 30 A dc power supply is to be designed with a ripple of less than 2.5%. Assume that a half-wave rectifier circuit (60 Hz) with a capacitor filter is used. (a) What is the size of the filter capacitor C? (b) What is the PIV rating for the diode? (c) What is the rms value of the transformer voltage needed for the rectifier? (d) What is the value of the peak repetitive diode current in the diode? (e) What is the surge current at t = 0+?...
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