ECE216-Lecture-01-Introduction

ECE216-Lecture-01-Introduction - ECE 216 DEVICE PHYSICS FOR...

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ECE 216 DEVICE PHYSICS FOR INTEGRATED CIRCUITS Lecture 01 Chapter 1 – INTRODUCTION TO SEMICONDUCTOR DEVICES Professor Hisham Z. Massoud Department of Electrical and Computer Engineering Fitzpatrick Building, Room 3521 Duke University, Durham, NC 27708–0291 [email protected] https://courses.duke.edu/webapps/portal/frameset.jsp ECE 216 Chapter 1 – Introduction to Semiconductor Devices Lecture 01.1
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ECE 216 TOPICS 1. A Brief History 2. Semiconductor Properties 3. Carrier Mechanisms in Semiconductor Devices 4. Basic Semiconductor Equations 5. Metal/Semiconductor or Schottky Barriers 6. PN Junctions 7. Bipolar-Junction Transistors 8. MOS Capacitors 9. MOS-Gated Diodes 10. Long-Channel MOSFETs 11. Short-Channel MOSFETs 12. SOI MOSFETs 13. Floating-Gate MOSFETs ECE 216 Chapter 1 – Introduction to Semiconductor Devices Lecture 01.2
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ECE 216 TOPICS 14. Semiconductor Device Characterization 15. Semiconductor Device Reliability 16. Noise in Semiconductor Devices 17. Fundamental Limits and Future Trends 18. SPICE and Compact Models 19. Submicron Device Technology 20. ECE 216 References ECE 216 Chapter 1 – Introduction to Semiconductor Devices Lecture 01.3
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1. A BRIEF HISTORY OF SILICON DEVICES 1876 Crystal Detectors (Braun) 1926 Field-Effect Device Concept (Lilienfeld) 1931 Theory of Conduction in Semiconductors (Wilson) 1938 Metal/Semiconductor Rectifier (Schottky) 1947 Point-Contact Transistor (Bardeen and Brattain) 1948 Bipolar-Junction Transistor (Shockley) 1948 First Experimental Majority-Carrier FET (Shockley and Pearson) 1949 Unijunction Transistor (Shockley et al. ) 1950 Silicon-Controlled Rectifier THYRISTOR (Shockley) 1951 Heterojunction Bipolar Transistor (Shockley) 1953 Junction Field-Effect Transistor (Dacey and Ross) 1955 Field-Effect-Induced Carrier Inversion in FETs (Ross) 1959 MOS Capacitor (Moll, Pfann and Garrett) 1959 Integrated Circuits Concept (Kilby and Noyce) 1960 First Si-SiO 2 MOSFET (Ligenza & Spitzer, Kahng & Atalla et al. ) ECE 216 Chapter 1 – Introduction to Semiconductor Devices Lecture 01.4
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1. A BRIEF HISTORY OF SILICON DEVICES 1960 Tunneling Hot-Electron Transfer Amplifier THETA (Mead) 1962 Metal-Base Transistor (Atalla and Kahng, Geppert) 1966 Metal-Semiconductor Field-Effect Transistor MESFET (Mead) 1967 Floating-Gate Avalanche-Injection MOS Transistor FAMOS (Kahng and Sze) 1967 Metal-Nitride-Oxide-Semiconductor Transistor MNOS (Wegener) 1969 Charge-Coupled Devices CCD (Boyle and Smith) 1970 Dynamic Random-Access Memory DRAM (Intel) 1971 Microprocessor (Hoff and Faggin, Intel) 1971 Erasable Programmable Read-Only Memory EPROM (Intel) 1972 Static-Induction Transistor SIT (Nishizawa et al. ) 1973 Surface-Oxide Transistor SOT (Shewchun and Clarke) 1979 Insulated-Gate Bipolar Transistor IGBT (Baliga) 1980 Floating-Gate Tunnel-Oxide Transistor FLOTOX EEPROM (John- son et al. ) 1981 Delta-Doped Field-Effect Transistor (Board et al. ) 1986 Permeable-Base Transistor PBT (Rosencher et al. ) ECE 216 Chapter 1 – Introduction to Semiconductor Devices Lecture 01.5
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2. SEMICONDUCTOR PROPERTIES 1. Introduction 2. The Hydrogen Atom 3. Schr¨ odinger Wave Equation 4. Electrons in a Crystal 5. Density of Electron-Energy States 6. The Effective Density of States 7. The Intrinsic Carrier Concentration
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