ECE216-Lecture-01-Introduction

Gate dielectric engineering 6 field oxide engineering

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Unformatted text preview: N DEVICE TECHNOLOGY 1. Introduction 2. Channel Engineering 3. Source and Drain Engineering 4. Gate Engineering 5. Gate -Dielectric Engineering 6. Field -Oxide Engineering 7. Isolation Techniques 8. Well Engineering in CMOS 9. Hot -Carrier -Resistant MOSFET Design 10. Spacer Engineering 11. After -Gate Implantation ECE 216 Chapter 1 – Introduction to Semiconductor Devices Lecture 01.24 20. ECE 216 – REFERENCES • A. S. Grove, Physics and Technology of Semiconductor Devices, J. Wiley (1967). • S. M. Sze, Physics of Semiconductor Devices, Second Edition, Wiley -Interscience (1981). • E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, Wiley -Interscience (1982). • R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, Second Edition, J. Wiley (1986). • C.-T. Sah, Fundamentals of Solid -State Electronics, World Scientific (1991). • H. C. Casey, Jr., Devices for Integrated Circuits, Silicon and III -V Compound Semiconductors, John Wiley (1999). ECE 216 Chapter 1 – Introduction to Semiconductor Devices Lecture 01.25 20. ECE 216 – REFERENCES • C. G. Fonstad, Microelectronic Devices and Circuits, McGraw -Hill (1994). • D. Foty, MOSFET Modeling with SPICE - Principles and Practice, PTR Prentice Hall (1997). • Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press (1998). • Y. Tsividis, Operation and Modeling of the MOS Transistor, Second Edition, McGraw -Hill (1999). • K. K. Ng, Complete Guide to Semiconductor Devices, Second Edition, J. Wiley and IEEE Press (2002). • A. B. Bhattacharyya, Compact MOSFET Models for VLSI Design, J. Wiley and IEEE Press (2009). ECE 216 Chapter 1 – Introduction to Semiconductor Devices Lecture 01.26...
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