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ECE216-Lecture-11-PN-Junction-Diodes

# ECE216-Lecture-11-PN-Junction-Diodes - ECE 216 DEVICE...

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ECE 216 DEVICE PHYSICS FOR INTEGRATED CIRCUITS Lecture 11 PN-JUNCTION DIODES Professor Hisham Z. Massoud Department of Electrical and Computer Engineering Fitzpatrick Building, Room 3521 Duke University, Durham, NC 27708–0291 [email protected] https://courses.duke.edu/webapps/portal/frameset.jsp ECE 216 Chapter 08 – PN-Junction Diodes Lecture 11.1

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LECTURE 11 - TOPICS 7. Forward-Bias Static I D ( V PN ) Current-Voltage Characteristics 7.1. Hole Diffusion-Current-Density Distribution in the n -Side Quasi-Neutral Region 7.2. Electron Diffusion-Current-Density Distribution in the p -Side Quasi-Neutral Region 7.3. Hole Diffusion Current Density at the Edge of the n -Side Depletion Region 7.4. Electron Diffusion Current Density at the Edge of the p -Side Depletion Region 7.5. Space-Charge-Recombination Current Density 7.6. The PN-Junction Diode Current Density ECE 216 Chapter 08 – PN-Junction Diodes Lecture 11.2
7. FORWARD-BIAS STATIC I D ( V PN ) CHARACTERISTICS 7.1. Hole Diffusion-Current-Density Distribution in the n -Side Quasi-Neutral Region The hole diffusion-current-density distribution in the n -side quasi-neutral re- gion is given by J p · x · diff,N ( x, V PN ) = - q D p,N dp N ( x, V PN ) dx , = - q D p,N d dx p N sinh W N - x L p,N sinh W N - W d,N L p,N exp q V PN k B T - 1 + p N , = q D p,N n 2 i L p,N N + d · cosh W N - x L p,N sinh W N - W d,N L p,N exp q V PN k B T - 1 . ECE 216 Chapter 08 – PN-Junction Diodes Lecture 11.3

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7. FORWARD-BIAS STATIC I D ( V PN ) CHARACTERISTICS 7.1. Hole Diffusion-Current-Density Distribution in the n -Side Quasi-Neutral Region Long-Base n -Side Quasi-Neutral Region If ( W N - W d,N ) L p,N , the hole diffusion-current-density distribution in the n -side quasi-neutral region is approximated by J p · x · diff,N ( x, V PN ) long-base = - q D p,N dp N ( x, V PN ) dx , ’ - q D p,N d dx p N exp - x - W d,N L p,N exp q V PN k B T - 1 + p N , q D p,N n 2 i L p,N N + d exp - x - W d,N L p,N exp q V PN k B T - 1 . ECE 216 Chapter 08 – PN-Junction Diodes Lecture 11.4
7. FORWARD-BIAS STATIC I D ( V PN ) CHARACTERISTICS 7.1. Hole Diffusion-Current-Density Distribution in the n -Side Quasi-Neutral Region Short-Base n -Side Quasi-Neutral Region If ( W N - W d,N ) L p,N , the hole diffusion-current-density distribution in the n -side quasi-neutral region is approximated by J p · x · diff,N ( x, V PN ) short-base = - q D p,N dp N ( x, V PN ) dx , ’ - q D p,N d dx ( p N ( W N - x ) ( W N - W d,N ) exp q V PN k B T - 1 + p N ) , q D p,N n 2 i ( W N - W d,N ) N + d exp q V PN k B T - 1 . It should be noted that W d,N ( V PN ) is bias-voltage-dependent. ECE 216 Chapter 08 – PN-Junction Diodes Lecture 11.5

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7. FORWARD-BIAS STATIC I D ( V PN ) CHARACTERISTICS 7.2. Electron Diffusion-Current-Density Distribution in the p -Side Quasi-Neutral Region The electron diffusion-current-density distribution in the p -side quasi-neutral region is given by J n · x · diff,P ( x, V PN ) = q D n,P dn P ( x, V PN ) dx , = q D n,P d dx n P sinh W P + x L n,P sinh W P - W d,P L n,P exp q V PN k B T - 1 + n P , = q D n,P n 2 i L n,P N - a
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ECE216-Lecture-11-PN-Junction-Diodes - ECE 216 DEVICE...

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