Quantum Modeling and Characterization of Deep Submicron MOSFETS

Quantum Modeling and Characterization of Deep Submicron MOSFETS

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QUANTUM MODELING AND CHARACTERIZATION OF DEEP SUBMICRON MOSFETS HOU YONG TIAN NATIONAL UNIVERSITY OF SINGAPORE 2003
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QUANTUM MODELING AND CHARACTERIZATION OF DEEP SUBMICRON MOSFETS HOU YONG TIAN (M. Sc., Peking University) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING NATIONAL UNIVERSITY OF SINGAPORE 2003
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i ACKNOWLEDGEMENTS Herewith I would like to express my sincere gratitude to my supervisor, Professor Li Ming-Fu, for his instruction, guidance and encouragement in both personal and academic matters. It is his firm theoretical background and expertise in semiconductors to assure the present project being conducted smoothly. Through my life, I will benefit from the experience and knowledge I gained in his group. I also deeply appreciate Professor Dim-Lee Kwong for his guidance, suggestions and valuable discussions throughout my research at NUS. I am further indebted to Dr. Jin Ying for his continuous help during all these years. Many thanks are also to other collaborators from CSM for their technical supports. The award of a research scholarship by the National University of Singapore is also gratefully acknowledged. I wish to thank my fellow postgraduate students from SNDL, COE and CICFAR for their invaluable discussions and assistance. In particular, some topics in thesis were finished together with Mr. Yu Hong Yu and Mr. Tony Low, it is my pleasure to acknowledge their help and cooperation. Many thanks also to Dr. Jie Bin Bin, Dr. Guan Hao, Dr. Chen Gang and Ms. Jocelyn Teo for their kind help. I also wish to thank all staff members in SNDL, COE and CICFAR for their kind technical support and management throughout the project. Finally, I would like to express my deeply gratitude to my family for their love, care, understanding, support and encouragement during all these years.
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ii Table of Contents Acknowledgement i Table of Contents ii Summary vii List of Figures iv List of Tables xvii List of Abbreviations xviii List of Symbols xx Chapter 1. Introduction 1 1.1. Overview 1 1.2. Introduction to CMOS Transistor Scaling 3 1.3. Quantum Mechanical Effects in MOS Devices 6 1.3.1. Carrier Quantization in MOS devices 6 1.3.2. Capacitive Contribution due to Quantum Mechanical Effect 8 1.3.3. Threshold Voltage Shift due to Quantum Mechanical Effect 9 1.3.4. Models for Carrier Quantization in CMOS Devices 11 1.4. Direct Tunneling through Ultrathin Gate Dielectrics 15 1.4.1. Basics of Direct Tunneling 15 1.4.2. A Review of the Models for Tunneling Current 16 1.5. Alternative High Permittivity (High-K) Gate dielectrics 21 1.5.1. Scaling Limit of SiO 2 2 1 1.5.2. High-K Gate Dielectrics 22 1.6. Metal Gate Technology 28
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iii 1.6.1. Polysilicon Gate Depletion Effect 28 1.6.2. Metal Gate Technology 29 1.7. Novel Device Architectures on SOI Technology 31 1.8. Objective of this thesis 33 1.9. Major Achievements in this Thesis 36 Chapter 2. Hole Quantization in MOS devices 38 2.1. Introduction 38 2.2. Multi-band Effective Mass Approximation Model 40 2.3. A New Simple Model for Hole Quantization by Six-band Effective
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This note was uploaded on 10/12/2011 for the course ECON 32 taught by Professor Jj during the Spring '10 term at Alexandria University.

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Quantum Modeling and Characterization of Deep Submicron MOSFETS

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