Tuck_IM - An introduction on MOSFET Chan Tuck Boon...

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An introduction on MOSFET 14 th Oct 2009 Chan Tuck Boon (tuckie@ucla.edu) 1
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NanoCAD Lab Outline MOSFET structure MOSFET operation Small dimension effects 2 Chan Tuck Boon (tuckie@ucla.edu)
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NanoCAD Lab MOS: Metal Oxide semiconductor Chan Tuck Boon (tuckie@ucla.edu) 3 Metal Oxide Semiconductor Bulk Source Gate Drain Polysilicon Active region Oxide (STI)
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NanoCAD Lab NMOS - off No inversion layer in channel. No drive (drift) current. Only leakage current (from gate and drain terminals). Chan Tuck Boon (tuckie@ucla.edu) 4 G Gnd D S B p N+ Gate N+ Source Drain D Vdd
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NanoCAD Lab NMOS – on (saturation) When V gs > V th , an inversion layer is formed. Chan Tuck Boon (tuckie@ucla.edu) 5 G Vdd D Vdd S B p N+ Gate N+ Source Drain
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NanoCAD Lab Modes of operation Cutoff – (V gs < V th ) Saturation – V GS > V th V DS > ( V GS - V th ) Linear region – V GS > V th V DS < ( V GS - V th ) V th = V th0 + γ[(V sb +2Φ) 0.5 -(2Φ) 0.5 ] Chan Tuck Boon (tuckie@ucla.edu)
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This note was uploaded on 10/12/2011 for the course ECON 32 taught by Professor Jj during the Spring '10 term at Alexandria University.

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Tuck_IM - An introduction on MOSFET Chan Tuck Boon...

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