fa10sols - I E:20 Final l2vaiii l*is,nhie 1 201(1 Ft F 12...

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Unformatted text preview: I,) E :20 Final l2vaiii l*is,nhie 1. 201(1 Ft F 12)) Final Exani l)oiiniihr T. 2010 1.) (25 pts) for I hi ( 2i [OS ligie etrililt shown Flow. explain lw ogle operation of lw irenit [nat IFIOS aid N\l( >5 ransistors as voltage nit wiled sivitelws using lii oireit gate volt ago ink for iali I vpe of transistor Express the iii di ii Ii for tlw [ogie liiiieti ii. nid explain hoi iOIi lieu in wlwtlier 11w it 11111 is a high or low Si It ago, f 6 n7 cc) 5 W — : —- _ _ _ _ _ _ _ _ _ .,i I-, / I j A B C U )- LLLJL iLi > L L IT L L I-I F i i I. Fl L L L H L H it 0• HL LjI, T L T i i i II L IT H Cl H H L H H F FIJI H F II 1111 ii , 2.) (25 pts) lie 11w flip—flip ireait shown I slow, eoniplit e 11w tinnng liagrain. V liiw\er t lii 11111 mt. if mit far flip—ui p i lianges value. gis r a brief rationale I ii what ioismd t hi ‘Iioici’. Note that die Hal nil mull nit, stiles arm mm) 1,). aimi k1 is ilwivs I) I liii ire extra lank tiniing diagranis on the next uiue if viii him 1 tI 2 I V...
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This note was uploaded on 10/16/2011 for the course ECE 320 taught by Professor Khan during the Spring '09 term at Ohio State.

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fa10sols - I E:20 Final l2vaiii l*is,nhie 1 201(1 Ft F 12...

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