Lec-03-MOS-RC-Model

Lec-03-MOS-RC-Model - EE115C Winter 2007 Digital Electronic...

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EE115C – Winter 2007 Digital Electronic Circuits Lecture 3: MOS Transistor: IV Model (Cont.) RC Model EE115C – Winter 2007 2 Announcements ± Discussions/Labs this week Tuesday 12-1pm & 4-5pm (44-110 E4) Wednesday 3-4pm (BH 3760) ± Dejan’s office hours Wednesday 4-5:30pm Thursday 10-11:30am ± Lab report Due Thursday Jan 18, 2pm Drop-off: discussions or Thursday in class
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EE115C – Winter 2007 3 Agenda ± Last Lecture MOS Transistor: Long Channel Modes of Operation: Off, Linear, Saturation MOS Transistor: Short Channel Modes of Operation: Off, Linear, Velocity Saturation , Saturation ± Today MOS IV Model: Review MOS RC Model EE115C – Winter 2007 4 Quadratic Relationship 0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 6 x 10 -4 V GS = 2.5 V V GS = 2.0 V V GS = 1.5 V V GS = 1.0 V Resistive Saturation V DS = V GS -V T V DS (V) I D (A) Current-Voltage Relations: A Good Ol’ Transistor
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EE115C – Winter 2007 5 A Model for Manual Analysis S D G I D () = 2 2 DS DS T GS n D V V V V L W k I ( ) DS T GS n D V V V L W k I + = λ 1 2 2 ( ) F SB F T T V V V φ γ 2 2 0 + + = V DS > V GS V T V DS < V GS V T with EE115C – Winter 2007 6 Outline – Last Lecture ± MOS Transistor Basic Operation Modes of Operation Deep sub-micron MOS [image courtesy of K. Cao, ASU]
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EE115C – Winter 2007 7 Linear Relationship -4 0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5 x 10 V GS = 2.5 V V GS = 2.0 V V GS = 1.5 V V GS = 1.0 V Early Saturation V DS (V) I D (A) Current-Voltage Relations: The Deep-Submicron Era EE115C – Winter 2007 8 Velocity Saturation ξ (V/μm) ξ c = 1.5 υ n (m/s) υ sat = 10 5 Constant mobility (slope = μ) Constant velocity ± Velocity saturates due to carrier scattering effects
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EE115C – Winter 2007 9 Velocity Saturation I D Long-channel device Short-channel device V DS V DSAT V GS -V T V GS = V DD V DSAT = Κ (V GT )·V GT EE115C – Winter 2007 10 I D versus V GS 0 0.5 1 1.5 2 2.5 0 1 2 4 5 6 x 10 -4 Long Channel Short Channel quadratic linear quadratic V GS (V) I D (A) 3
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