tut1 - Tutorial 1 Q1. Design an amplifier for maximum gain...

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Tutorial 1 Q1 . Design an amplifier for maximum gain at 6 GHz using single-stub matching sections. Calculate the gain. The GaAs FET has the following S parameters ( 0 50 Z =Ω ): f (GHz) S 11 S 21 S 12 S 22 6 .0 0.55 150 ∠− ° 2.56 108 ∠° 0.04 30 0.60 50 ° 50 50 l 4 l 3 Z L 50 l 2 l 1 Z S 50 50 Q2 . Design a Class A linear amplifier using a bipolar transistor to operate at 1.5 GHz. The corresponding scattering parameters at the large-signal input and output matching reflection coefficients 0.86 146 S Γ= ° and 0.52 110 L ° for output power at 1 dB gain compression 26.4 dBm o P = are given as follows: f (GHz) S 11 S 21 S 12 S 22 1.5 0.67 144 2.7 66 0.11 60 0.31 177 ° Design the input and output matching networks. If the circuit is to be fabricated on an alumina substrate with 10 r ε= and substrate thickness 0.635 mm H = , find the width and length of the lines. Also calculate the input power required to produce . o P l 4 l 3 Z L Z 01 l 2 l 1 Z S 50 50 Z 1 Z 2 Z 02 Z 04 03 Q3 . The S parameters of a GaAs FET measured with a 50
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This note was uploaded on 10/21/2011 for the course EE 44101 taught by Professor Huihoontat during the Spring '11 term at National University of Singapore.

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tut1 - Tutorial 1 Q1. Design an amplifier for maximum gain...

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