Homework 1: Due 4/14/10
ECE 165, Prof. Buckwalter
1
For these problems, feel free to take a look at the model file in the TSMC directory. You
might also see this useful link http://www.ece.uci.edu/docs/hspice/hspice_2001_2171.html
Problem 1
. DC Behavior. Use the 0.2um CMOS Models. 13 Points
A) Calculate the maximum current strength for a minimum size (W = 0.3u, L = 0.18u) NMOS
device at Vds = 1.8.
Determine kn and Vsat for the NMOS device. (3)
B) Calculate R
eq
from (3.42). (3)
C) Calculate the maximum current for the PMOS device for Vds = 1.8. Determine kp and Vsat
for the PMOS device.
(3)
D) Calculate
the R
eq
. (3)
C) Find the ratio of the maximum strength for the NMOS and PMOS devices. (1)
Problem 2
. Inverter Capacitance. Assume a size ratio of PMOS to NMOS of 2 to 1 for an
inverter.
A) For your inverter, calculate the capacitance that exists at the input (gate) and output node.
Use
appropriate approximations for the drain and source capacitances and assume the minimum size
NMOS device and PMOS device that is scaled according to your answer in part A. 72 points
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This note was uploaded on 10/24/2011 for the course ECON 165 taught by Professor Berman,e during the Spring '08 term at UCSD.
 Spring '08
 Berman,E
 Economics

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