ECE 108 Assignment 2
CMOS LOGIC AND TRANSMISSION GATES
Winter 2011
In this lab you will use PSPICE to design and simulate CMOS 2-input NAND and CMOS Trans-
mission gates which are fundamental building blocks of modern digital systems. We will be using a
"LEVEL 2" SPICE model of a 0.8um process with NMOS and PMOS SPICE models given below.
Level 2 model parameters for use with 0.8um process:
.MODEL MN NMOS LEVEL=2 LD=0.15U TOX=200.0E-10
+ NSUB=5.36726E+15 VTO=0.743469 KP=8.00059E-05 GAMMA=0.543
+ PHI=0.6 U0=655.881 UEXP=0.157282 UCRIT=31443.8
+ DELTA=2.39824 VMAX=55260.9 XJ=0.25U LAMBDA=0.0367072
+ NFS=1E+12 NEFF=1.001 NSS=1E+11 TPG=1.0 RSH=70.00
+ CGDO=4.3E-10 CGSO=4.3E-10 CJ=0.0003 MJ=0.6585
+ CJSW=8.0E-10 MJSW=0.2402 PB=0.58
.MODEL MP PMOS LEVEL=2 LD=0.15U TOX=200.0E-10
+ NSUB=4.3318E+15 VTO=-0.738861 KP=2.70E-05 GAMMA=0.58
+ PHI=0.6 U0=261.977 UEXP=0.323932 UCRIT=65719.8
+ DELTA=1.79192 VMAX=25694 XJ=0.25U LAMBDA=0.0612279
+ NFS=1E+12 NEFF=1.001 NSS=1E+11 TPG=-1.0 RSH=120.6
+ CGDO=4.3E-10 CGSO=4.3E-10 CJ=0.0005 MJ=0.5052
+ CJSW=1.349E-10 MJSW=0.2417 PB=0.64
Preparation – Reference Inverter Design
Design a CMOS inverter with V
DD
=3V and a load capacitance of 10fF. This inverter will be our
“load” for the rest of this assignment. Use a length of 0.8um for both the pull-up and pull-down de-
vices. You must adjust the widths of each transistor such that V
inv
= V
DD
/2 and achieve fastest
speed response. Measure and record t
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- Spring '08
- KENNETHY.YUN
- Gate, Logic gate, n-input NAND gate, reference CMOS inverter
-
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