EE2005-Tutorial03 - NATIONAL UNIVERSITY of SINGAPORE...

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NATIONAL UNIVERSITY of SINGAPORE Department of Electrical and Computer Engineering EE2005 – Electronics Tutorial 3 1. Consider an npn Bipolar Junction Transistor (BJT) with a forward-active beta β = 150, and I S = 10 -15 A. The BJT is operated at room temperature. (a) If the transistor is operated in the forward-active mode with I B = 12 μ A and V CB = 1 V, find V BE , I C , and I E . [ A n s : I C = 1.8 mA; V BE = 0.705 V; I E = 1.81 mA] (b) How much must we increase the value of V BE for the I C to increase by a factor of 1 0 ? [ A n s : 0.0576 V] 2. The BJT in Fig. 2A has a β = 75 and is to be biased in the forward-active mode. Assuming that V BE = 0.7 V, choose the values of resistors R 1 , R 2 , R C , and R E to establish I C = 1.5 mA, V C = 6 V, and V E = 3 V. Figure Q2. R C 9 V R 1 R 2 R E
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3. Biasing of a npn BJT in a Circuit. Consider the circuit in Fig. Q3 where the BJT has a β of 100. (a) Find
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This note was uploaded on 10/24/2011 for the course ELECTRICAL ee2021 taught by Professor Tan during the Spring '11 term at National University of Singapore.

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EE2005-Tutorial03 - NATIONAL UNIVERSITY of SINGAPORE...

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