EE2005-Tutorial4 - NATIONAL UNIVERSITY of SINGAPORE...

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NATIONAL UNIVERSITY of SINGAPORE Department of Electrical and Computer Engineering EE2005 – Electronics Tutorial 4 (Homework Assignment: Do Questions 2 and 3, and hand-in your solutions to your Tutorial Group Representative on Tuesday, 15 th Sep. 2009, right after the EE2005 lecture at LT6) 1. Consider the circuit in Fig. Q1 where the n-MOSFET has V th = 0.4 V and K n = 0.5 μ n C ox ’W/L = 120 μ A/V 2 . Find the value of R D and R S needed to achieve a saturation drain current I Dsat = 100 μ A and V DS = 3 V. Fig. Q1. All voltages are specified with reference to the ground. 2. In Fig. Q2, the n-MOSFET has a V th = 0.5V and n C ox = 250 μ A/V 2 , W = 3 μ m, and L = 0.5 μ m. Find the required value for R so that I D = 100 μ A. In addition, find the value of V D . ( 5 m a r k s ) Fig. Q2. R I D V DD = 3V V D R D I D -5 V +5 V R S V S V D V G 1 M Ω
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3. Consider the circuit in Fig. Q3. Assume that the n-MOSFET has V th = 1 V and K n = 500 μ A/V 2 . You may assume that C IN
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This note was uploaded on 10/24/2011 for the course ELECTRICAL ee2021 taught by Professor Tan during the Spring '11 term at National University of Singapore.

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EE2005-Tutorial4 - NATIONAL UNIVERSITY of SINGAPORE...

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