HW6 - thickness of 0.5 μ m = 0.5 2 /0.53 + 0.5/2.9 - 0.144...

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
3.4 From Jaeger <100> Silicon - Wet Oxygen T B/A B Xi tau Xo t (hrs) 1150 5.322 0.667 0 0.000 1 1.688 1150 5.322 0.667 1 1.688 2 4.687 1150 5.322 0.667 2 6.375 3 6.687 3.11 From Jaeger To make a numeric calculation, we must choose a temperature – say 1100 o C. Using the values from Table 3.1 for wet oxygen at 1100 o C on <100> silicon yields (B/A) = 2.895 μ m/hr and B = 0.529 μ m 2 /hr. In the oxidized region, the initial oxide X i = 0.2 μ m which gives = 0.144 hrs. The time required to reach a
Background image of page 1
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: thickness of 0.5 μ m = 0.5 2 /0.53 + 0.5/2.9 - 0.144 = 0.50 hrs. In the unoxidized region, 0.5 hours oxidation yields This result can also be obtained using Fig. 3.6 in a manner similar to the solution of Problem 3.13. Note that this result is almost independent of the temperature chosen. The growth in the unoxidized area ranges from 41 nm at 1000 o C to 44 nm at 1200 o C....
View Full Document

This note was uploaded on 10/24/2011 for the course EEE 5322 taught by Professor W.r.eisenstadt during the Fall '10 term at University of Florida.

Ask a homework question - tutors are online