VLSI_Class_Notes_8_2010 - EEL 5322 W.R.Eisenstadt -1- VLSI...

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EEL 5322 W.R.Eisenstadt - 1 - VLSI Class Notes Fall 2010, Class 8. Homework #7, Due Friday 9/17/10 1) Standard oxidation problem, Jaeger, p.65, problem 3.10 at 1075 O C. part b) can be done arithmetically, too. You many want to program the oxidation equations in Matlab or mathcad, etc. 2) What is the minimum oxide thickness and maximum oxide thickness the process would have if there is a 20 O C variation of temperature on the wafers in the furnace in problem 1 above. That is the wafer has cold spots that are 1055 O C and the wafer has hot spots are 1095 O C during oxidation. 3) If a designer builds a 500 um x 400 um capacitor with conductors on the bottom and top of this oxide what is the range of capacitance values that the designer could expect? See the inside cover of Rabaey for ox e and ox t values come from your answer in part 2. ox ox ox C Area t ± = ² ³ L l Reading for Monday: Jaeger Chapter 3.1, 3.2 and 3.3, and Chap. 6.1, 6.2 and 6.3 Lecture discussion : Example thermal oxidation of Silicon calculation
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This note was uploaded on 10/24/2011 for the course EEE 5322 taught by Professor W.r.eisenstadt during the Fall '10 term at University of Florida.

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VLSI_Class_Notes_8_2010 - EEL 5322 W.R.Eisenstadt -1- VLSI...

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