VLSI_Class_Exam_1_Solution_2006

VLSI_Class_Exam_1_Solution_2006 - E EL 5 322 VLSI Circuits...

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EEL 5322 VLSI Circuits and Technology Exam 1,2006 Open Note, Open Book, 60 Minutes, 100 points PROBLEM 1 : 175 Points) I~nplant, Oxidation , Diffusion A stack of layers of Silicon dioxide and Polysiljcv~~ have been constructed on top of the Silicon substrate. From the of the wafer down into the wafer there is 0.1 pm (10011m) thick Iaycr deposited oxide (LTO Oxide 1 ), a 0, t pm (t 001in1) thick layer of Polysilicon (Pol )'silicon l), a sccoild 0.1 prn (1 00r~n) lhick layer deposited oxide (LTO Oxide 21, a second 0.1 (lOOnrn) thick layer of Polysilicon (Pol ysilicon 21, a 0.1 ( l0011rn) thick layer of thermal oxide (Thern~al Oxide 1). The silicon and Polysilicon with background N-type doping 2" 10l3/crn3. . - , -- LTO Oxide 1 (100 nrn thick) - -. - . Polysilicon 1 (100 nm thick) .- LTO Oxide 2 00 nm thick) - - - - - -- - - Polysilicon 2 (1 nrn thick) .- - - - *--- A Silicon substrate (500um thick) a) There is an implant af Boron at 5*10":cm2 into the top ofthe wafer 220 KeV. USE the Boron in~plantat jon range table prnvided the end exam and assume LTO Oxide and Thennal Oxide have the same ion implant ranges.
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This note was uploaded on 10/24/2011 for the course EEE 5322 taught by Professor W.r.eisenstadt during the Fall '10 term at University of Florida.

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VLSI_Class_Exam_1_Solution_2006 - E EL 5 322 VLSI Circuits...

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