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VLSI_Class_Exam_I_2002

# VLSI_Class_Exam_I_2002 - EEL 5322 VLSI Circuits and...

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EEL 5322 VLSI Circuits and Technology Exam I, 2002 Open Note, Open Book, 60 Minutes, 100 points PROBLEM 1: (40 Points) NAME: . Implantation and Diffusion SSN: . You are to analyze an implant of a dose of 5x10 14 cm -2 Boron atoms into a Si wafer. The Si wafer is covered with 40nm of SiO 2. The peak dose of the implant should be at a position as close to 200 nm below the wafer surface as you can get with the Boron range tables. There is a 5x10 -13 n-type background doping. a) What is your implant energy? Sketch the doping profiles, and include the numerical values for the doping concentration at the SiO 2 /Si interface, the peak doping concentration and its position and the position of the p-n junction in the silicon wafer. b) The wafer undergoes 1.5 hour thermal diffusion step at 1000 C in a neutral ambient. Assume no Boron enters or leaves the Si wafer. Also, assume that very little Boron dose is in the oxide. Sketch the final profile including the doping concentration at the SiO 2 /Si interface, the peak doping concentration and its position and the position of the p-n junction in the silicon wafer.

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VLSI_Class_Exam_I_2002 - EEL 5322 VLSI Circuits and...

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