VLSI_Class_Exam_I_2002

VLSI_Class_Exam_I_2002 - EEL 5322 VLSI Circuits and...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
EEL 5322 VLSI Circuits and Technology Exam I, 2002 Open Note, Open Book, 60 Minutes, 100 points PROBLEM 1: (40 Points) NAME: . Implantation and Diffusion SSN: . You are to analyze an implant of a dose of 5x10 14 cm -2 Boron atoms into a Si wafer. The Si wafer is covered with 40nm of SiO 2. The peak dose of the implant should be at a position as close to 200 nm below the wafer surface as you can get with the Boron range tables. There is a 5x10 -13 n-type background doping. a) What is your implant energy? Sketch the doping profiles, and include the numerical values for the doping concentration at the SiO 2 /Si interface, the peak doping concentration and its position and the position of the p-n junction in the silicon wafer. b) The wafer undergoes 1.5 hour thermal diffusion step at 1000 C in a neutral ambient. Assume no Boron enters or leaves the Si wafer. Also, assume that very little Boron dose is in the oxide. Sketch the final profile including the doping concentration at the SiO 2 /Si
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 10/24/2011 for the course EEE 5322 taught by Professor W.r.eisenstadt during the Fall '10 term at University of Florida.

Page1 / 3

VLSI_Class_Exam_I_2002 - EEL 5322 VLSI Circuits and...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online