VLSI_Class_Exam_I_2003

VLSI_Class_Exam_I_2003 - EEL 5322 VLSI Circuits and...

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EEL 5322 VLSI Circuits and Technology Exam I, 2003 Open Note, Open Book, 60 Minutes, 100 points PROBLEM 1: (30 Points) NAME: . Oxidation SSN: . A 0.1 μ m (100nm) thick layer of thermal oxide, (Oxide 1) is grown in H 2 O at 1100C. Following the first oxidation a 0.200 μ m (200nm) thick film of Polysilicon is patterned on top of Oxide 1. On top of that a 0.1 μ m (100nm) layer of LTO oxide is deposited using CVD. Finally, a 0.2 μ m (200 nm) Si Nitride layer is patterned over the LTO oxide. Assume the standard oxidation equations and rate constants work for the structure shown below. In you solutions assume that B and B/A are the same for Polysilicon and silicon oxidation (see below). a) What is the time required to completely oxidize the polysilicon that is exposed (not under the Si nitride) in H 2 O at 1100C? b) Sketch what the wafer cross-section looks like after part a) c) Assume that IC process calls for oxidation time of 40% longer than the time required in part a) to deal with possible variations in polysilicon layer thickness. Show all the equation(s) and constants necessary to calculate numerical answers
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VLSI_Class_Exam_I_2003 - EEL 5322 VLSI Circuits and...

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