VLSI_Class_Exam_I_2004

VLSI_Class_Exam_I_2004 - EEL 5322 VLSI Circuits and...

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EEL 5322 VLSI Circuits and Technology Exam I, 2004 Open Note, Open Book, 60 Minutes, 100 points PROBLEM 1: (50 Points) NAME: . I m p l a n t UFID: . . A 0.1 μ m (100nm) thick layer of thermal oxide, (Oxide 1) is grown in H 2 O at 1100C. Following the first oxidation a 0.200 μ m (200nm) thick film of Polysilicon is patterned on top of Oxide 1. On top of that a 0.01 μ m (10nm) layer of LTO oxide is deposited using CVD. Finally, a 0.2 μ m (200 nm) Si Nitride layer is patterned over the LTO oxide. You are to implant Boron at 1*10 15 /cm 2 into the structure the peak of the dopant distribution is in the middle of the Polysilicon layer. The Si Nitride acts as a implant mask to block any implant. Assume the Boron range statistics are described for all materials on the wafer by the statistics for Boron in Polysilicon (Table 6.9 from TMA). (You may use your book Boron implant model if you don’t have the handout). a) What is the energy you would you to make the Boron implant? What is the
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VLSI_Class_Exam_I_2004 - EEL 5322 VLSI Circuits and...

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