VLSI_Class_Exam_I_2006

VLSI_Class_Exam_I_2006 - EEL 5322 VLSI Circuits and...

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EEL 5322 VLSI Circuits and Technology Exam I, 2006 Open Note, Open Book, 60 Minutes, 100 points PROBLEM 1: (75 Points) NAME: . Implant, Oxidation , Diffusion UFID: . A stack of layers of Silicon dioxide and Polysilicon have been constructed on top of the Silicon substrate. From the top of the wafer down into the wafer there is 0.1 μ m (100nm) thick layer of deposited oxide (LTO Oxide 1), a 0.1 μ m (100nm) thick layer of Polysilicon (Polysilicon 1), a second 0.1 μ m (100nm) thick layer of deposited oxide (LTO Oxide 2), a second 0.1 μ m (100nm) thick layer of Polysilicon (Polysilicon 2), a 0.1 μ m (100nm) thick layer of thermal oxide (Thermal Oxide 1). The silicon and Polysilicon with background N-type doping of 2*10 13 /cm 3 . a) There is an implant of Boron at 5*10 15 /cm 2 into the top of the wafer at 220 KeV. USE the Boron implantation range table provided at the end of the exam and assume LTO Oxide and Thermal Oxide have the same ion implant ranges . Write the equation for the Boron implant concentration in the silicon substrate, N(x).
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VLSI_Class_Exam_I_2006 - EEL 5322 VLSI Circuits and...

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