Exam II_2003 - EEL 5322 VLSI Circuits and Technology Exam...

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Exam II, byWilliam Eisenstadt 10/19/2010 Page 1 of 6 EEL 5322 VLSI Circuits and Technology Exam II Open Note, Open Book, 60 Minutes, 100 points PROBLEM 1: (36 Points) NAME: . Assorted Short Questions: SSN: . Select and circle the correct answer to the questions: I) In an alignment tree, the Contact Mask is aligned directly to the Diffusion Active mask and the Polysilicon is aligned to the Diffusion/Active Mask. Assume there are no process fixed bias errors or etching errors. The alignment standard deviation s DC = s PD = 0.1 m m. a. The alignment s PC of the Polysilicon to Contact is 0.2 m m. TRUE FALSE CANNOT DETERMINE b. For at least a 99.7% probability of successful overlap of Polysilicon over Contact to Diffusion The minimum overlap dimension should be, 0.14 m m 0.20 m m 0.28 m m 0.314 m m 0.40 m m 0.42 m m 0.6 m m OTHER VALUE c. Suddenly your find out that IC process fixed bias errors become significant in the etching process. To keep the same high yield the Polysilicon over Contact overlap will: DECREASE INCREASE STAY THE SAME II)
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This note was uploaded on 10/24/2011 for the course EEE 5322 taught by Professor W.r.eisenstadt during the Fall '10 term at University of Florida.

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Exam II_2003 - EEL 5322 VLSI Circuits and Technology Exam...

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