Exam II_2007 - EEL 5322 VLSI Circuits and Technology Exam...

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Exam II, byWilliam Eisenstadt 10/19/2010 Page 1 of 6 EEL 5322 VLSI Circuits and Technology Exam II Open Note, Open Book, 60 Minutes, 100 points, 10/26/2007 PROBLEM 1: (40 Points) NAME . Resistance and Cross Sections and Design Rules: UFID: . i) (20 points) Calculate the resistance for the layout from line X to line X in the layout below. Assume the current starts in the drain area of the transistor at Line X and goes up to the metal 1. Each square is 125nm. 125nm x 125 nm Line X Line X’ A A’ B B’
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Exam II, byWilliam Eisenstadt 10/19/2010 Page 2 of 6 ii) (10 points). Look at the layout and draw the corresponding IC process cross sections from A to A . Assume 3 levels of metals as in the class notes. ii) (10 points). Look at the layout and draw the corresponding IC process cross section from B to B . Assume 3 levels of metals as in the class notes.
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Exam II, byWilliam Eisenstadt 10/19/2010 Page 3 of 6 PROBLEM 2: (30 points) Short Answer: i) CD/Alignment (15 points) Using the alignment tree on the handout CD page 1 from Class note 15, you are to
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This note was uploaded on 10/24/2011 for the course EEE 5322 taught by Professor W.r.eisenstadt during the Fall '10 term at University of Florida.

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Exam II_2007 - EEL 5322 VLSI Circuits and Technology Exam...

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