Gm_BY_ID_Methodology - Design of MOS Amplifiers Using gm/ID...

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Ashutosh Tiwari Design of MOS Amplifiers Using gm/ID Methodology
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Ashutosh Tiwari Outline z Introduction z Why gm/Id Methodology z Performance Metrics z Generation Of Performance Curves z Implementation And Design examples
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Ashutosh Tiwari Introduction Mainstream methods assume generally strong inversion and use the transistor gate voltage overdrive (Vov) as the key parameter Micropower design techniques, on the other hand, exploit weak inversion models. This methodology is based on a unified synthesis methodology in all the regions of operation of MOS transistor.
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Ashutosh Tiwari Introduction z The method exploits the transconductance over dc drain current ratio (gm/Id) relationship versus the normalized current [Id/(W/L)].
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Ashutosh Tiwari Why gm/Id Methodology Consider a simple common source amplifier, the power and bandwidth are given by following equations:
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Ashutosh Tiwari With gm and L fixed, smaller Vov translates into a bigger (wider) device, and thus larger Cgs. So we conclude from this that the Vov is not a good design parameter
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This note was uploaded on 10/24/2011 for the course ELECTRICAL FKE taught by Professor Buntat during the Spring '09 term at Punjab Engineering College.

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Gm_BY_ID_Methodology - Design of MOS Amplifiers Using gm/ID...

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