ELCT_371_Homework4_Sp11

ELCT_371_Homework4_Sp11 - . (Assume that V T = 26 mV at...

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ELCT 371: Spring 2011 Homework #4 (based on Chapters 3 and 4) Due: April 7, 2011 in class 1. A certain diode gas Is = 10 -14 A, and n = 1. Assume that V t = 26 mV. (a) Determine the dynamic resistance if the forward current is 1 mA. (b) Use the dynamic resistance to find the change in the diode voltage if the current changes to 1.1mA. (c) Use the Shockley equation to determine the diode voltages for 1 mA and 1.1 mA. Compare the difference between these values with the change computed in part(b). What is the percentage error? 2. Solve problem 3.60 in text 3. Consider an npn transistor at room temperature that has I ES = 10 -13 A, β = 100, V CE = 10 V, and i E = 10 mA. Find V BE , i B , i C , and
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Unformatted text preview: . (Assume that V T = 26 mV at room temperature) 4. Determine the region of operation for a room-temperature silicon npn transistor that has = 100 if (a) V CE = 10 V and I B = 20 A; (b) I C = I B = 0; (c) V CE = 3 V and V BE = 0.4 V; (d) I C = 1 mA and I B = 50 A. 5. Use the large-signal modes for the transistors illustrated in Figure 4.19 to find I C and V CE for the npn transistor circuits (parts a, b and c) of Figure P4.33. Assume that = 100. Repeat for = 300 and compare the results for both values. 6. Solve problems 4.34(a) and (b) in text 7. Solve problem 4.38 in text 8. Solve problem 4.42 in text 9. Solve Problem 4.45 in text...
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This note was uploaded on 10/25/2011 for the course ELCT 371 taught by Professor Koley during the Spring '08 term at South Carolina.

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