ELCT363_Lecture7_CrystalGrowth_II

ELCT363_Lecture7_CrystalGrowth_II - Announcements Homework...

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ELCT 363: Intro. to Microelectronics Lecture 7; Slide Mandal/Fall 2011 Announcements Homework Assignment #1 is due Today. Quiz #1 (5% toward final grade) will be on next Tuesday, – September 13, covering the course lectures until today (September 8). 1
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ELCT 363: Intro. to Microelectronics Lecture 7- Mandal/Fall 2011 2 Epitaxial Growth (Cont’d) Epitaxial growth is used to deposit a few microns of high quality material which forms the active region of the device The substrate crystal may be a wafer of the same material as the grown layer homo -epitaxial growth, e.g. InP/InP The substrate crystal and epitaxial film may be different material with a similar lattice structure hetero -epitaxial growth, e.g. InGaAs/InP, AlGaAs on GaAs, SiGe on Si Czochralski Float zone Bridgman
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ELCT 363: Intro. to Microelectronics Lecture 7; Slide Mandal/Fall 2011 Lattice Matching in Epitaxial Growth 3 Epitaxial layers are grown on a substrate with similar lattice structure. InP epitaxial layers on InP natural matching of crystal lattice AlGaAs epitaxial layers on GaAs substrates Is this growth possible? Energy Band gap E g as a function of lattice constant GaAs and AlAs both have similar lattice sturcture with lattice constant ~5.65Å. Epitaxial layers of the ternary compound AlGaAs will have same lattice constant as AlAs and GaAs. As a result, AlGaAs can be grown on GaAs Substrates with little lattice mismatch.
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ELCT 363: Intro. to Microelectronics Lecture 7; Slide Mandal/Fall 2011 Epitaxial growth with lattice mismatch 4 Example: Growth of SiGe on Si. Lattice constant: Si= 5.43Å, Ge= 5.65Å. The
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This note was uploaded on 10/25/2011 for the course ELCT 363 taught by Professor Mandal during the Spring '11 term at South Carolina.

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ELCT363_Lecture7_CrystalGrowth_II - Announcements Homework...

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