Arrhenius

Arrhenius - thetaDGaN = 600; EexGaN = 0; i = 1:601; T(i) =...

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h = 6.626e-34; %Plancks Constant k = 1.381e-23; %Boltzmans Constant m0 = 9.11e-31; %electron rest mass Eg0Si = 1.875e-19; etaSi = 7.577e-23; thetaDSi = 636; EexSi = 1.186e-21; i = 1:601; T(i) = 199+i; meSi = (1.028+(6.11e-4)*T-(3.09e-7)*T.^2)*m0; %Me* mhSi = (0.61+(7.83e-4)*T-(4.46e-7)*T.^2)*m0; %Mh* NcSi = 2*((2*pi*meSi*k.*T)/h^2).^1.5; NvSi = 2*((2*pi*mhSi*k.*T)/h^2).^1.5; EgtSi(i) = Eg0Si-((etaSi*T.^2)./(T+thetaDSi))-EexSi; NiSi(i) = ((NcSi.*NvSi).^0.5).*exp(-EgtSi./(2*k.*T)); Eg0GaN = 5.255e-19; etaGaN = 1.234e-22;
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Unformatted text preview: thetaDGaN = 600; EexGaN = 0; i = 1:601; T(i) = 199+i; meGaN = 0.13*m0; %Me* mhGaN = 1.3*m0; %Mh* NcGaN = 2*((2*pi*meGaN*k.*T)/h^2).^1.5; NvGaN = 2*((2*pi*mhGaN*k.*T)/h^2).^1.5; EgtGaN(i) = Eg0GaN-((etaGaN*T.^2)./(T+thetaDGaN))-EexGaN; NiGaN(i) = ((NcGaN.*NvGaN).^0.5).*exp(-EgtGaN./(2*k*T)); semilogy(1./T,NiSi/100^3) hold semilogy(1./T,NiGaN/100^3) xlabel('T^-^1 (K^-^1)'); ylabel('ln(N_i) cm^-^3'); title('Intrinsic Carrier Density, N_i vs T^-^1 (Si and GaN)');...
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This document was uploaded on 10/27/2011 for the course EMS 172 at UC Davis.

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