Fermi - etaGaN = 7.7e-4; thetaDGaN = 600; EexGaN = 0; i =...

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h = 6.626e-34; %Plancks Constant k = 8.617e-5; %Boltzmans Constant m0 = 9.11e-31; %electron rest mass Eg0Si = 1.17; etaSi = 4.73e-4; thetaDSi = 636; EexSi = 0.0074; i = 1:501; T(i) = 199+i; meSi = (1.028+(6.11e-4)*T-(3.09e-7)*T.^2)*m0; %Me* mhSi = (0.61+(7.83e-4)*T-(4.46e-7)*T.^2)*m0; %Mh* EgtSi(i) = Eg0Si-((etaSi*T.^2)./(T+thetaDSi))-EexSi; EfSi(i) = (EgtSi/2)+(3/4)*k*T*log((mhSi/meSi)^1.5); Eg0GaN = 3.28;
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Unformatted text preview: etaGaN = 7.7e-4; thetaDGaN = 600; EexGaN = 0; i = 1:501; T(i) = 199+i; meGaN = 0.13*m0; %Me* mhGaN = 1.3*m0; %Mh* EgtGaN(i) = Eg0GaN-((etaGaN.*T.^2)./(T+thetaDGaN))-EexGaN; EfGaN(i) = (EgtGaN/2)+(3/4)*k*T*log((mhGaN/meGaN)^1.5); plot(T,EfSi) hold plot(T,EfGaN) xlabel('T (K)'); ylabel('Intrinsic Fermi Energy, E_F(eV)'); title('Intrinsic Fermi Energy, E_F vs T (Si and GaN)');...
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This document was uploaded on 10/27/2011 for the course EMS 172 at UC Davis.

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