T11Example

# T11Example - Example 1(From P11-7 Circuits Devices&...

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Unformatted text preview: Example 1: (From P11-7, Circuits, Devices & Systems, by R.J. Smith and R.C. Dorf) It is desired to increase the conductivity of silicon by a factor of 1000 by doping with arsenic (Group V) element. Specify the doping density and identify the important charge carrier. Given Intrinsic carrier density of silicon 16 10 5 . 1 × = i n atoms per m 3 Electron mobility 135 . = n μ m 2 / V-s Hole mobility 048 . = p μ m 2 / V-s Electron charge 19 10 6 . 1- × = e C Answers to Example 1: ( 29 ( 29 ( 29 1 1 19 16 m 4932 . 10 6 . 1 10 5 . 1 048 . 135 . 1000 1000 1000 1000--- Ω = × × × × + = × × + = × × + × = × = e n e p n i p n p n intrinsic new μ μ μ μ σ σ As Arsenic is a Group V element, when Si doped with As, the important charge carrier is electron, so for the doped Si, we can assume ≈ p and d n N n ≈ 3 19 19 atom/m 10 28 . 2 10 6 . 1 135 . 4932 . × = × × = = = ≈- e N e N e n n new d n d n n new μ σ μ μ σ Well, we can calculate the concentration of the hole in the doped Si...
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T11Example - Example 1(From P11-7 Circuits Devices&...

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