che294f02project07solnX

# che294f02project07solnX - CHE/MAE 294 Project 7 Extra...

This preview shows pages 1–3. Sign up to view the full content.

CHE/MAE 294 Project 7 Extra Credit Solution J. J. Weimer November 30, 2002 > restart: Procedures Create procedure to determine number density of dopant carriers given ppX concentration, dopant, and pure semiconductor. > nodcalc := proc(ppX, X, dop, sc) (ppX/X)*rho[sc]*(No/AM[dop]) end proc: Create procedure to determine intrinsic conductivity given material and temperature. > cintcalc := proc(sc, T) no[sc]*exp(-Eg[sc]/(2*kb*T))*(mue[sc] + muh[sc])*q end proc: Create procedure to determine dopant conductivity given ppX > cdopcalc := proc(ppX, X, dop, sc, ds, T) nodcalc(ppX, X, dop, sc)*exp(-Ed[ds]/(kb*T))*mu[ds]*q end proc: Data Values > readmylib(pchemconstants): readmylib(atomicmasses): > rho[Si] := 2.33e6: rho[Ge] := 5.32e6: Data Tables Gap Energies (J/electron) > Eg := table([Si = 1.107*q, Ge = 0.66*q]): Mobilities (m2/V s) > mue := table([Si = 0.140, Ge = 0.038]): muh := table([Si = 0.364, Ge = 0.190]): Intrinsic Base Carrier Number Densities (number electrons/m3) Calculate values from the numbers given in the text at 300 K > no[Si] := 14e15/(exp(-Eg[Si]/(2*kb*300))); := no Si .2782574698 10 26 > no[Ge] := 23e18/(exp(-Eg[Ge]/(2*kb*300))); := no Ge .8043423557 10 25

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
Dopant Levels > Ed := table([PSi = 0.044*q, PGe = 0.012*q, AsSi = 0.049*q, SbSi = 0.039*q,
This is the end of the preview. Sign up to access the rest of the document.

## This document was uploaded on 11/07/2011.

### Page1 / 3

che294f02project07solnX - CHE/MAE 294 Project 7 Extra...

This preview shows document pages 1 - 3. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online