HW4-Due_Dec-01

HW4-Due_Dec-01 - NNSE 618 Home assignment #4 Due: December...

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NNSE 618 Home assignment #4 Due: December 01, 2011 1. (10 points) Draw (by hand) bandstructure (E vs. x) of the following structures and indicate E C , E V , E F ,  BI and other parameters: E C , E V where applicable: a) p-n + homo-junction in GaAs ; b) p + -N heterojunction of p + -GaAs and n-Al 0.3 Ga 0.7 As with conduction band offset E C / E G = 0.7; c) p + -P heterojunction of p + -GaAs and p-Al 0.3 Ga 0.7 As with conduction band offset E C / E G = 0.7 d) Schottky junction of Au/p-GaAs with Schottky barrier 0.8 eV. Hint: begin with band alignment with respect to vacuum; consider depletion width vs. doping. 2. (20 points)Using SimWindows calculate an equilibrium field and potential in a GaAs p-n junction and compare the plots to those calculated using the full depletion approximation (Plot curves on the same graphs). Explain the difference and verify it with simulation. P-n structure consists of 1 m - thick layers of p-type (N a = 5x10 16 cm -3 ) and
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HW4-Due_Dec-01 - NNSE 618 Home assignment #4 Due: December...

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