NNSE618-L8-transport-phenomenology

NNSE618-L8-transport-phenomenology - NNSE 618 Lecture #8 1...

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Unformatted text preview: NNSE 618 Lecture #8 1 Lecture contents Few problems on semiconductor statistics Electron transport: phenomenology Mobility vs. temperature Drift velocity in high field NNSE 618 Lecture #8 2 Semiconductor statistics: Problems 1. An intrinsic silicon wafer has 10 10 cm-3 holes. When 10 18 cm-3 donors are added, what is the new hole concentration? 2. An intrinsic silicon wafer at 470 K has 10 14 cm-3 holes. When 10 14 cm-3 acceptors are added, what is the new electron and hole concentrations? 3. GaAs substrate contains 2x10 17 cm-3 EL2 deep donor centers with E d = 0.8 eV and 5x10 16 cm-3 shallow acceptors. Find carrier concentration. How the carrier concentration changes when (1) 2x10 16 cm-3 and (2) 10 17 cm-3 shallow donors (E d = 6 meV) are added? What are the requirements to obtain semi-insulating material? Note: Consider EL2 center as a simple deep donor. (HW2) NNSE 618 Lecture #8 3 Semiconductor statistics: Problems 1. An intrinsic Silicon wafer has 10 10 cm-3 holes. When 10 18 cm-3 donors are added, what is the new hole concentration?...
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NNSE618-L8-transport-phenomenology - NNSE 618 Lecture #8 1...

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