This preview has intentionally blurred sections. Sign up to view the full version.
View Full DocumentThis preview has intentionally blurred sections. Sign up to view the full version.
View Full DocumentThis preview has intentionally blurred sections. Sign up to view the full version.
View Full DocumentThis preview has intentionally blurred sections. Sign up to view the full version.
View Full DocumentThis preview has intentionally blurred sections. Sign up to view the full version.
View Full Document
Unformatted text preview: 1
ECEN5827 x erg/l 1’ 72am 3" 2/12
1. [15 points] An inverter circuit is shown in Figure l. The device W/L ratios are given in the ﬁgure and the
device parameters are given below. Answer the following questions. NMOS: MC” = IOOM/Vz, Vm 21V, yn z 0, an m 0.01[V“]
PMOS: upcox =25/1A/V2, le =1V, yp err/1p zoom/‘1]
Il Figure 1 0\/ 21/ {V 61/ W 21/ HV‘;[/ 9] Draw in approximate curves on the axes given above for V0 vs V; and I, vs V1 for 0 S V1 S 5V . Label the operating modes of each device on the V0 vs V; plot for each region.
On the V0 vs VI plot, label the input voltage V1 at the point where VO = 2.5 V. On the I] vs V1 plot, label the input voltage V1 at the point where I] is equal to its peak value.
Solve and label the approximate peak value of l]. 2 2
K2: "K, C9 lémeM 007/4 adrue => 10! :ﬂ/Vr61~bé>:'zéz— ﬂz (1%” #4)
I7:*/ (a) f—' gm(vf~4):movf ~14) :> l/f: Voo‘Vé +z/WV1 ,3)!
Mfr—IT / ﬁr: /Va. (VJ—VH2 : QSaw' (b) [6] At the dc operating point where Vo = 2.5 V, solve for the approximate low frequency gain A” = v“ /v,. and output
resistance, Rout. 9/“— xtwi NM _
<~l 7); Km“ %:£_EI7I:QW:XSM/V
<7”??? i Jzo‘l/J?” gm” Q (gm: Shagwﬂ/V
2 3 AH Mamet/6w :1? Final Exam, 12/13/10 R2, UCB, Fall 2010 ECEN 5827 3/12 2. [% pts] In the CMOS opamp shown in Fig. 2, the transistor parameters are:
1% NMOS: ,unCox = 40 uA/Vz, Vm = 0.4 V, yn m 0, 1,, w 0 (small, but results in Rout listed)
PMOS: prox = 20 uA/Vz, th = —0.4 V, Y}; z 0, it], w 0 (small, but results in Rom listed)
You can assume that the DC bias current sources 13 = 131 = 132 = 10 uA, and the DC bias voltage sources VBIASl, VBIASZ, are ideal. The smallsignal open—loop transfer function of the opamp is
A(s) = vo/(v(+)—v(—)), and the smallsignal output resistance is R out~ M12 1000/1
7 i012 lav/“Al M13
1000/1 —VSS=—l.6V Figure 2: CMOS op—amp, [B = 131 = 132 = 10 uA. Rout = 50 M9, A(s) = vo/(v(+)—v(—)).
a) [2] Label + and — input in Fig. 2. b) [3] Assuming the DC input and output voltages are V(+) = V(—) = V0 = O, VBIASl and VBIAS2 are such that
all transistors are in the active/saturation region, ﬁnd the small—signal parameters gml, gm 10 and gm13. gm: w 24/ /,m .2 My f
pf/z fin/a: 2’” /————\ Final Exam, 12/13/10 RZ, UCB, Fall 2010 ECEN 5827 4/12 0) [6] Find Via/AS] and ngg to maximize output voltage swing of the opamp. Then ﬁnd the boundaries of the output voltage swing, VOWn, VOmax (116. the range of output voltages such that all devices stay in the active/saturation region). For each of the two boundaries, specify which transistors (or transistor) are at
the triode boundary. 1 9 —  .— 
VIE/‘sz : I/éS/o 1’ Iévg: V; + Z 16:" ’ Qéy [Ky 1V
6/55) V345,: 1/0,) ~ Vol/,2 4/5493 : [5V*&,6V3 LU! M l/0l/17a7:.: (MIR— Trials2°”): V695“! ’L/Vép/ : /' Hy Vanna/L 2 Mbawa}; l/anz/ 1/5“ 3 “XL/V M
/——' d) [6] At the DC operating point found in part (b), the smallsignal (lie. incremental) output resistance of
\A the op—amp is Rout = 50 M9. Solve for the lowfrequency gain A(O). c) 4(0): /¢(o): Zﬂ (low/Mm”) 2’W .3 Wwa : my”? /0&%4> Final Exam, 12/13/10 RZ, UCB, Fall 2010 ECEN 5827 5/12 .1 g, S
e) [3] Suppose that the devices in the opamp of Fig. 2 have A” = A], = 9». Given Rout = 50 MS), ﬁnd the
channellength modulation parameter 9». J. /.
jg: vi— >> Z .: a/EZL » ’40}
)‘IO Zia/3 o/O/awc [C a; 7LAc av/jga/ MWZC (on; ,‘m/Qm Mad/e] I; : 0272 50+ J 65W: we) 7% ; 2&0
£6: 2:;zjwMM 3%
7g) :4: 2w // 2
, /4 Final Exam, 12/13/10 R2, UCB, Fall 2010 ECEN 582 7 6/12 3. [25 points] A CMOS op—amp is characterized with the open—loop transfer function given below and has an output
resistance of Row. 20
AOL (S) = :0 = A0
'd Hi] 1+i
mp1 mp2
A0 =100dB
fp2 =5MHZ
fpl 2?’ Raul :? (a) [10] With the op—amp in the feedback conﬁguration shown in Fig. 3 and a load capacitance of C L = 40 pF , the closed—loop bandwidth of the system is BW= 100 kHz and the phase margin is ¢M = 75° (you can assume that
R >> Rom). Solve for the open—loop opamp dominant pole frequency jg, and output resistance, R 011/  ‘ 1
7(5): / ' J»./4OL(;): ,KZE. / jﬁ' “Z4 /5 /o (/ 147%)(H afﬁx/7‘ 2%) erﬂJCL
(2‘5"? *‘ 7/1; whee P2427)” 2> 75;! r @612 /0 (IO—F";—
ﬂw WMf—z/W'TSSW/Mfg?) {Let/{ii} 41/;0": 75’" e 7E = (7% 161/2:
7C: 5L6?» «70': day/760 1175:“ capacitance ' order to maintain a phase margin of ¢M 2 75°. inal Exam, 12/13/10 R2, UCB, Fall 2010 ECEN 5827 7/12 (p?) [10] With the op—amp in the non—inverting, unitygain conﬁguration with a load capacitance of C L = 40pF , complete é the following:
o Solve for the phase margin & state whether the closed loop response has complex poles or all real poles. 0 Sketch approximate bode plots of the magnitude response of the loop gain lT‘ and closed—loop gain [Ami (in dB
on yaxis and log frequency on x—axis). Label the key salient features of the bode asymptotes. 0 Sketch the output response to a step input, including the key features of any overshoot, ringing (and ringing
frequency if there is any), and relative damping (e. g. is it under—damped, critically damped, or overdamped). 7(5): étés)‘ 4"“ 75: Va; K413 Ma ’ PM: 950 CLPolesr all real? 9> 75% : 700—fawd(i§;>”ﬁamd g I am 6w: W «> 76w? 71 may; a. __ a L 0h j:
2> 1;: Male W2 9&4— 7a—mu +2 Final Exam, 12/13/10 RZ, UCB, Fall 2010 ECEN 5827 8/12 4. [20 pts] Figure 4 shows a current mirror that serves as a smallsignal current ampliﬁer. The transistor parameters are:
NMOS: ,unCox = 40 uA/VZ, Vm : 0.4 v, y” z 0, 2,, z 0. The input current source has a DC bias component [IN = 5 uA. The output is connected to an ideal DC bias
voltage source VB: 0.5 V. At this DC operating point, the parasitic capacitances of M1 are Cgsl = 0.2 pF,
ng1 = 0.02 pF, Cdbl = 0.1 pF, and C5“ = 0.1 pF, and the current ampliﬁer small—signal transfer function can be
written as: bi Am = l?!" = A<0>1+bls = Am) ‘0:
z," l+als 1+: a) You can assume that all device arasitic ca acitances are r0 ortional to the channel Width. [OUT + lout [IN + [in 7' Figure 4: Current ampliﬁer, [IN = 5 uA. a, )L
#(07: Eff: /0 4.1:“
j” g )1 a) [4] Find the lowfrequency current gain A(O). Wﬁccapaeﬁaneesomif/
'4‘” “7" (“/5 05 M/ t , [7523 Zﬂ/Z/ dei: ‘(dﬁz " [Sb 2 ’ﬂ/r
6 / A ,d) Lug/Using the N—EET, ﬁnd expressions for ﬂ, and fl. No credit will be given to other approaches to ﬁnding
A(s). To get full credit, show the equivalent circuit models and the test setups used to ﬁnd all and 191. (Note
that the output is current 1'01”; therefore, “nulling the output” means that the input im and a test source are adjusted so that 10m —> O). mew Final Exam, 12/13/10 RZ, UCB, Fall 2010 ECEN 5827 9/12
Prob. 4: Continued (space for part c) Final Exam, 12/13/10 RZ, UCB, Fall 2010 ECEN 5827 10/12 5. [15 pts] Figure 5 shows a current mirror designed to generate a dc bias current IREF= 10 uA through a variableresistance load Rzoad. The transistor parameters are:
NMOS: ,unCox = 40 uA/Vz, Vm = 0.4 V, y” z 0, 2n = (0.1) l/V. VDD = +3 .2v Figure 5: Current mirror a) [6] Assuming that Rload is such that all devices operate in the active/saturation region, ﬁnd R so that
[REF = 10 uA. State any approximations you made. V6: law 4&4 2f??? :WMN /’/ ‘ 656,; g ,
VKM.
.. V
5:) 3 V00 5‘2 : 9'2 f4 f“ %. b) [3] Suppose that R has a large positive temperature coefﬁcient. Is the temperature coefﬁcient of [REF
positive or negative? Justify your answer. jﬁ’ﬂﬁgi 9 W
/ ¢> 756%): — my?) Final Exam, 12/13/10 r RZ, UCB, Fall 2010 ECEN 5827 11/12 0) [6] Assuming all devices operate in the active/saturation region, ﬁnd an expression for and compute the
smallsignal (incremental) output resistance Rom. 55M Final Exam, 12/13/1 0 RZ, UCB, Fa112010 ...
View
Full Document
 Spring '08
 staff
 Voltage source, Current Source, Widlar current source, Grid bias, Biasing

Click to edit the document details