MIT6_012S09_lec06

MIT6_012S09_lec06 - Lecture 6 PN Junction and MOS...

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Unformatted text preview: Lecture 6 PN Junction and MOS Electrostatics(III) Metal-Oxide-Semiconductor Structure Outline 1. Introduction to MOS structure 2. Electrostatics of MOS in thermal equilibrium 3. Electrostatics of MOS with applied bias Reading Assignment: Howe and Sodini, Chapter 3, Sections 3.7-3.8 6.012 Spring 2009 Lecture 6 1 1. Introduction Metal-Oxide-Semiconductor structure MOS at the heart of the electronics revolution: • Digital and analog functions – Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is key element of Complementary Metal- Oxide-Semiconductor (CMOS) circuit family • Memory function – Dynamic Random Access Memory (DRAM) – Static Random Access Memory (SRAM) – Non-Volatile Random Access Memory (NVRAM) • Imaging – Charge Coupled Device (CCD) and CMOS cameras • Displays – Active Matrix Liquid Crystal Displays (AMLCD) 6.012 Spring 2009 Lecture 6 2 Metal interconnect to gate Metal interconnect to bulk x Gate oxide ε ox = 3.9 ε o p-type ε s = 11.7 ε o n + polysilicon gate Figure by MIT OpenCourseWare. 2. MOS Electrostatics in equilibrium Idealized 1D structure: • Metal : does not tolerate volume charge – ⇒ charge can only exist at its surface • Oxide : insulator and does not have volume charge – ⇒ no free carriers, no dopants • Semiconductor : can have volume charge – ⇒ Space charge region (SCR) In thermal equilibrium we assume Gate contact is shorted to Bulk contact. (i. e, V GB = 0V) 6.012 Spring 2009 Lecture 6 3 For...
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This note was uploaded on 11/07/2011 for the course COMPUTERSC 6.012 taught by Professor Charlesg.sodini during the Spring '09 term at MIT.

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MIT6_012S09_lec06 - Lecture 6 PN Junction and MOS...

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