MIT6_012S09_lec08

MIT6_012S09_lec08 - Lecture 8 MOSFET(I) MOSFET I-V...

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Lecture 8 MOSFET(I) MOSFET I-V CHARACTERISTICS Outline 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation 3. I-V characteristics Reading Assignment: Howe and Sodini, Chapter 4, Sections 4.1-4.3 6.012 Spring 2009 Lecture 8 1
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1. MOSFET: layout, cross-section, symbols active area (thin interconnect Key elements: Inversion layer under gate (depending on gate voltage) Heavily doped regions reach underneath gate - inversion layer to electrically connect source and drain Cterminal device: - body voltage important 6.012 Spring 2009 Lecture 8
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Circuit symbols Two complementary devices: n-channel device (n-MOSFET) on p-substrate – uses electron inversion layer p-channel device (p-MOSFET) on n-substrate – uses hole inversion layer n + n + p Bulk or Body Drain Source Gate (a) n-channel MOSFET D G I Dp B p + p + n Bulk or Body Drain Gate (b) p-channel MOSFET Source + _ V SG D S G + + _ V GS I Dn I Dn B V SD > 0 V DS > 0 + _ V BS + _ V SB D G B S S S B D G I Dp 6.012 Spring 2009 Lecture 8 3
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(2. Qualitative Operation Drain Current (Id: proportional to inversion charge and the velocity that the charge travels fiom source to drain Velociv: proportional to electric field fiom drain to source Gate-Source Voltage (VG& controls amount of inversion charge that carries the current Drain-Source Voltage (V'J : controls the electric field that drifts the inversion charge fiom the source to drain Want to understand the relationship between the
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MIT6_012S09_lec08 - Lecture 8 MOSFET(I) MOSFET I-V...

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