MIT6_012S09_lec09

MIT6_012S09_lec09 - Lecture 9 MOSFET(II) MOSFET I-V...

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Unformatted text preview: Lecture 9 MOSFET(II) MOSFET I-V CHARACTERISTICS(contd.) Outline 1. The saturation region 2. Backgate characteristics Reading Assignment: Howe and Sodini, Chapter 4, Section 4.4 6.012 Spring 2009 Lecture 9 1 1. The Saturation Region Geometry of problem Regions of operation: Cut-off: V GS < V T No inversion layer anywhere underneath the gate I = D Linear: V GS >V T and 0 < V DS < V GS -V T : Inversion layer everywhere under the gate W V DS = I D L n C ox V GS 2 V T V DS 6.012 Spring 2009 Lecture 9 2 The Saturation Region (contd.) Saturation: V GS > V T , and V DS > V GS - V T : Inversion layer pinched-off at drain end of channel I D = W n C ox [ V GS V T ] 2 2 L Output characteristics: Last lecture : To derive the above equations for I D , we used for Q N (y), the charge-control relation at location y: Q ( y ) = C [ V V ( y ) V ] N ox GS T for V GS V(y) V T . . Note that we assumed that (a) V BS = V GS = V GB , and (b) V T is independent of y. See discussion on body effect in Section 4.4 of text. 6.012 Spring 2009 Lecture 9 3 The Saturation Region (contd..) Review of Q N , E y , and V in linear regime as V DS increases: Ohmic drop along channel de-biases inversion layer current saturation ....
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MIT6_012S09_lec09 - Lecture 9 MOSFET(II) MOSFET I-V...

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