MIT6_012S09_lec16

MIT6_012S09_lec16 - Lecture 16 The pn Junction Diode (III)...

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Unformatted text preview: Lecture 16 The pn Junction Diode (III) Outline • I-V Characteristics (Review) • Small-signal equivalent circuit model • Carrier charge storage –Diffusion capacitance Reading Assignment: Howe and Sodini; Chapter 6, Sections 6.4- 6.5 1 6.012 Spring 2009 Lecture 16 1. I-V Characteristics (Review) Diode Current Equation: V D ( ) I = I e V th − 1 D o 2 6.012 Spring 2009 Lecture 16 Physics of forward bias: Diode Current equation: I D = I o exp qV D − 1 kT • Junction potential φ J (potential drop across SCR) reduced by |V D | – ⇒ minority carrier injection into QNRs • Minority carrier diffusion through QNRs • Minority carrier recombination at contacts to the QNRs (and surfaces) • Large supply of carriers injected into the QNRs – ⇒ I D ∝ exp qV D kT 3 6.012 Spring 2009 Lecture 16 Physics of reverse bias: I D = I o exp qV D − 1 kT • Junction potential φ J (potential drop across SCR) increased by |V D | – ⇒ minority carrier extraction from QNRs • Minority carrier diffusion through QNRs • Minority carrier generation at surfaces & contacts of QNRs • Very small supply of carriers available for extraction – ⇒ I saturates to small value D – ⇒ I ≈ − I D o 4 6.012 Spring 2009 Lecture 16 2. Small-signal equivalent circuit model If v d small...
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This note was uploaded on 11/07/2011 for the course COMPUTERSC 6.012 taught by Professor Charlesg.sodini during the Spring '09 term at MIT.

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MIT6_012S09_lec16 - Lecture 16 The pn Junction Diode (III)...

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