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MIT6_012S09_lec17 - Lecture 17 The Bipolar Junction...

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Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime Outline The Bipolar Junction Transistor (BJT): structure and basic operation I-V characteristics in forward active regime Reading Assignment: Howe and Sodini; Chapter 7, Sections 7.1, 7.2 6.012 Spring 2009 Lecture 17 1
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1. BJT: structure and basic operation n+ polysilicon contact metal contact to base to n+ emitter region \ / A' I 'field oxide n+- p - n sandwich (intrinsic npn transistor) (a) edge of n+ buried layer Bipolar Junction Transistor: excellent for analog and fkont-end communications applications. 6.012 Spring 2009 Lecture 17'
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NPN BJT Collector Characteristics Similar to test circuit as for an n-channel MOSFET …except I B is the control variable rather than V BE V CE I C = I C ( I B , V CE ) (a) 1 50 100 150 200 250 300 I C� ( µ A) V CE (V) 6 (b) 1 2 3 4 8 I B = 1 µ A I B = 2 µ A (reverse� active) (forward active) (saturation) I B = 0 (cutoff) I B = 500 nA I B = 1 µ A I B = 1.5 µ A I B = 2 µ A I B = 2.5 µ A I B + 5 4 3 2 6.012 Spring 2009 Lecture 17 3
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Close enough for minority carriers to interact can diffuse quickly through the base Far apart enough for depletion regions not to interact prevent “punchthrough” Simplified one-dimensional model of intrinsic device: Emitter Base Collector I E I B I C W B -X BE W B +X BC W B +X BC +W C -W E -X BE V BE V BC + - + - x 0 Regions of operation: saturation reverse cut-off forward� active V BC V BC V CE V BE V BE B C E + - + - + - V CE = V
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