hw2s - Question 1. For silicon, germanium and gallium...

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Question 1. For silicon, germanium and gallium arsenide, calculate from the effective mass for density of states calculations (Appendix 3) the effective densities of states in the conduction and valence band, and from those calculate the intrinsic carrier density. (assume T = 300K). a) List the calculated values in a table together with the values from Appendix 3 as shown below: The effective densities of states are obtained from 2 / 3 2 * ] 2 [ 2 h kT m N e c and 2 / 3 2 * ] 2 [ 2 h kT m N h v While the intrinsic carrier density is obtained from kT E v c i g e N N n 2 / Using the bandgap and effective mass for density of states calculations listed below: Name Symbol Germanium Silicon GaAs Bandgap energy at 300 K E g (eV) 0.66 1.12 1.424 Effective mass for density of states calculations Electrons m e * / m 0 0.55 1.08 0.067 Holes m h * / m 0 0.37 0.81 0.45 one finds the following results: T = 300K Germanium Silicon GaAs Calculated From App. 3 Calculated From App. 3 Calculated From App. 3 N c (cm -3 ) 1.02 x 10
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hw2s - Question 1. For silicon, germanium and gallium...

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