{[ promptMessage ]}

Bookmark it

{[ promptMessage ]}

# hw3s - Question 1 Consider a silicon wafer which is doped...

This preview shows pages 1–2. Sign up to view the full content.

Question 1. Consider a silicon wafer, which is doped uniformly with 10 17 cm -3 phosphorous atoms and 5 x 10 16 cm -3 boron atoms. Calculate the following using numerical techniques: 1. The electron density versus temperature 2. The Fermi energy versus temperature 3. The resistivity versus temperature Plot all variables on a linear scale versus the inverse of the temperature (1000/ T ). Vary the temperature from 75 K to 1000 K and make sure you include enough points on each plot to obtain a smooth continuous curve. Make sure you include the impurity distribution functions (see section 2.5.3) when calculating the carrier densities. The ionized donor density equals the donor density times the probability that the donor level is not occupied or N d + = N d [1 - f donor ( E d )]. Start from charge neutrality and specify each term as a function of the Fermi energy. This gives you a single transcendental equation, which needs to be solved numerically.

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
This is the end of the preview. Sign up to access the rest of the document.

{[ snackBarMessage ]}

### Page1 / 4

hw3s - Question 1 Consider a silicon wafer which is doped...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online